Structural characterization of InAs/GaAs quantum-dot nanostructures
Identifieur interne : 010035 ( Main/Repository ); précédent : 010034; suivant : 010036Structural characterization of InAs/GaAs quantum-dot nanostructures
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Abstract
We have performed high-resolution x-ray diffraction measurements on vertically aligned InAs/GaAs quantum-dot nanostructures. The measurements were carried out for both the symmetric (004) and asymmetric (113) and (224) Bragg reflections. Theoretical simulations of the rocking curves indicate that the x-ray signal is primarily from the pseudomorphically strained (In,Ga)As wetting layers. The average thickness and indium composition in the wetting layers, as determined from simulations of the rocking curves, were, respectively, 0.72 nm and 88%. Transmission electron microscopy studies show the creation and annihilation of quantum dots with no observable dislocations. © 2001 American Institute of Physics.
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Pal</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Laboratory for Optics and Quantum Electronics, University of Virginia, Charlottesville, Virginia 22904-4743</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Laboratory for Optics and Quantum Electronics, University of Virginia, Charlottesville</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Materials Science, University of Virginia, Charlottesville, Virginia 22904-4743</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Materials Science, University of Virginia, Charlottesville</wicri:cityArea></affiliation></author><author><name sortKey="Towe, E" uniqKey="Towe E">E. Towe</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Laboratory for Optics and Quantum Electronics, University of Virginia, Charlottesville, Virginia 22904-4743</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Laboratory for Optics and Quantum Electronics, University of Virginia, Charlottesville</wicri:cityArea></affiliation></author><author><name sortKey="Chen, S" uniqKey="Chen S">S. Chen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Laboratory for Optics and Quantum Electronics, University of Virginia, Charlottesville, Virginia 22904-4743</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Laboratory for Optics and Quantum Electronics, University of Virginia, Charlottesville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0260902</idno><date when="2001-06-25">2001-06-25</date><idno type="stanalyst">PASCAL 01-0260902 AIP</idno><idno type="RBID">Pascal:01-0260902</idno><idno type="wicri:Area/Main/Corpus">011084</idno><idno type="wicri:Area/Main/Repository">010035</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor quantum dots</term><term>Semiconductor superlattices</term><term>TEM</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865H</term><term>6110N</term><term>6837L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Point quantique semiconducteur</term><term>Diffraction RX</term><term>TEM</term><term>Semiconducteur III-V</term><term>Superréseau semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have performed high-resolution x-ray diffraction measurements on vertically aligned InAs/GaAs quantum-dot nanostructures. The measurements were carried out for both the symmetric (004) and asymmetric (113) and (224) Bragg reflections. Theoretical simulations of the rocking curves indicate that the x-ray signal is primarily from the pseudomorphically strained (In,Ga)As wetting layers. The average thickness and indium composition in the wetting layers, as determined from simulations of the rocking curves, were, respectively, 0.72 nm and 88%. Transmission electron microscopy studies show the creation and annihilation of quantum dots with no observable dislocations. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>78</s2></fA05><fA06><s2>26</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structural characterization of InAs/GaAs quantum-dot nanostructures</s1></fA08><fA11 i1="01" i2="1"><s1>PAL (D.)</s1></fA11><fA11 i1="02" i2="1"><s1>TOWE (E.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHEN (S.)</s1></fA11><fA14 i1="01"><s1>Laboratory for Optics and Quantum Electronics, University of Virginia, Charlottesville, Virginia 22904-4743</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Materials Science, University of Virginia, Charlottesville, Virginia 22904-4743</s1></fA14><fA20><s1>4133-4135</s1></fA20><fA21><s1>2001-06-25</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0260902</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have performed high-resolution x-ray diffraction measurements on vertically aligned InAs/GaAs quantum-dot nanostructures. The measurements were carried out for both the symmetric (004) and asymmetric (113) and (224) Bragg reflections. Theoretical simulations of the rocking curves indicate that the x-ray signal is primarily from the pseudomorphically strained (In,Ga)As wetting layers. The average thickness and indium composition in the wetting layers, as determined from simulations of the rocking curves, were, respectively, 0.72 nm and 88%. 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